论文信息 - Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr‐Cu‐O Films during Thermal Annealing in Flowing Air

Oxidation of Sputtered Cu, Zr, ZrCu, ZrO2, and Zr‐Cu‐O Films during Thermal Annealing in Flowing Air

The article deals with oxidation of Cu, Zr, ZrCu, ZrO2, and Zr-Cu-O films during post-deposition thermal annealing in flowing air. The films were deposited using dc unbalanced magnetron from pure or composed target in Ar or an Ar + O2 mixture. The oxidation behavior of the films was characterized by high-temperature thermogravimetry and XRD. Mechanical properties were measured by a microindenter Fischerscope H100. Thermal annealing was carried out over a wide range from 300 to 1 300 °C. Special attention was devoted to the oxidation of Cu and to the effect of Cu content in Zr-Cu-O films on the oxidation resistance. It was shown that the conversion at ∼1 040 °C is a reversible process.

P. Zeman | J. Musil | R. Čerstvý | M. Jirout | M. Šašek

[1] P. Zeman,et al. Properties of reactively sputtered W–Si–N films , 2006 .

[2] P. Zeman,et al. High-temperature oxidation resistance of Ta-Si-N films with a high Si content , 2006 .

[3] P. Zeman,et al. Physical properties and high-temperature oxidation resistance of sputtered Si3N4∕MoNx nanocomposite coatings , 2005 .

[4] P. Zeman,et al. Structure and properties of magnetron sputtered Zr–Si–N films with a high (≥25 at.%) Si content , 2005 .

[5] Yongfu Zhu,et al. Oxidation Mechanism of Cu2O to CuO at 600–1050°C , 2004 .

[6] P. Zeman,et al. Physical and mechanical properties of sputtered Ta–Si–N films with a high (⩾40 at %) content of Si , 2004 .

[7] T. Narushima,et al. Oxidation of silicon and silicon carbide in ozone-containing atmospheres at 973 K , 2002 .

[8] H. Holleck. Material selection for hard coatings , 1986 .

[9] D. Campbell,et al. A sensitive bending beam apparatus for measuring the stress in evaporated thin films , 1969 .