Counting of deep-level traps using a charge-coupled device

Quantization in dark current generation has been observed for the first time through the use of a virtual-phase charge-coupled device. Two sites for bulk silicon dark current have been identified with capture cross sections of 1.8 × 10^-15cm²and 5.4 × 10^-16cm², and concentrations of 1.3 × 10⁹cm^-3and 1.5 × 10⁸cm^-3, respectively.