Applications of radioactive ion beams to solid-state physics

[1]  H. Granzer,et al.  Surface and interface studies with ASPIC , 2000 .

[2]  M. Henry,et al.  Photoluminescence analysis of semiconductors using radioactive isotopes , 2000 .

[3]  G. Weyer Mössbauer spectroscopy at ISOLDE , 2000 .

[4]  P. Blaha,et al.  Group V acceptors in CdTe: Ab initio calculation of lattice relaxation and the electric-field gradient , 2000 .

[5]  Wahl,et al.  Lattice location and stability of ion implanted Cu in Si , 2000, Physical review letters.

[6]  W. Frank,et al.  Diffusion of gold in relaxed Si–Ge epi-layers , 1999 .

[7]  T. Korhonen,et al.  AB INITIO STUDY OF ACCEPTOR-DONOR COMPLEXES IN SILICON AND GERMANIUM , 1999 .

[8]  Y. Ashkenazy,et al.  Nuclear stimulated desorption of isolated cadmium atoms from structured surfaces , 1999 .

[9]  D. Forkel-wirth Exploring solid state physics properties with radioactive isotopes , 1999 .

[10]  V. Galindo,et al.  Stability and diffusion of Hg implanted YBa2Cu3O6+x , 1999 .

[11]  D. Forkel-wirth,et al.  Microscopic Study Of The Hydrogen Diffusion In III-V Semiconductors , 1998 .

[12]  O. Jonsson,et al.  Recent developments of the ISOLDE laser ion source , 1998 .

[13]  W. Witthuhn,et al.  Band-gap states of Ti, V, and Cr in 4H-SiC: Identification and characterization by elemental transmutation of radioactive isotopes , 1998 .

[14]  H. Granzer,et al.  Static Magnetic Hyperfine Fields in Magnetically Polarized Pd , 1998 .

[15]  M. Cardona,et al.  Fundamentals of semiconductors : physics and materials properties , 1997 .

[16]  A. Vantomme,et al.  DIRECT EVIDENCE FOR TETRAHEDRAL INTERSTITIAL ER IN SI , 1997 .

[17]  R. Vianden,et al.  Hall effect measurements on transmutation doped semiconductors , 1997 .

[18]  C. Tuijn On the History of Solid-State Diffusion , 1997 .

[19]  U. Wahl Emission channeling studies of Li in semiconductors , 1997 .

[20]  H. Granzer,et al.  New Approach for Range Measurements of Induced Magnetic Interactions in Pd , 1997 .

[21]  S. Roe,et al.  Si pad detectors , 1996 .

[22]  T. Wichert Radioactive probe atoms in semiconductors , 1996 .

[23]  J. Bollmann,et al.  Doping and compensation phenomena of Ag in CdTe , 1996 .

[24]  R. Magerle,et al.  Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels , 1995, Physical review letters.

[25]  M. Henry,et al.  Radioactive isotopes for photoluminescence spectroscopy-111In in silicon , 1994 .

[26]  Keller,et al.  Influence of electronic parameters on the electric-field gradients induced by H at the probe atom 111In/111Cd in Si. , 1992, Physical review. B, Condensed matter.

[27]  Hans Hofsäss,et al.  Emission channeling and blocking , 1991 .

[28]  W. Frank The Interplay of Solute- and Self-Diffusion - A Key for Revealing Diffusion Mechanisms in Silicon and Germanium , 1991 .

[29]  J. W. Petersen,et al.  Identification of band‐gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon , 1990 .

[30]  H. Mehrer Implantation of radioisotopes at ISOLDE a novel source production technique for diffusion studies in solids , 1987 .

[31]  D. V. Lang,et al.  Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions , 1974 .

[32]  G. Hevesy Die Platzwechselgeschwindigkeit der Ionen im Kristall , 1920 .

[33]  U. Wahl Advances in electron emission channeling measurements in semiconductors , 2000 .

[34]  Sidney Perkowitz,et al.  Optical characterization of semiconductors : infrared, raman, and photoluminescence spectroscopy , 1993 .

[35]  R. Gwilliam,et al.  The electrical and radioactive assessment of the transmutation doping of GaAs following implantation by 111In , 1992 .

[36]  G. Langouche Hyperfine interaction of defects in semiconductors , 1992 .