论文信息 - Cross-Coupling Low-Triggering Dual-Polarity CLTdSCR ESD Protection in CMOS

Cross-Coupling Low-Triggering Dual-Polarity CLTdSCR ESD Protection in CMOS

This letter reports a novel ultrafast cross-coupling low-triggering dual-polarity SCR (CLTdSCR) ESD protection network in a CMOS. The measurement shows ultralow and tunable triggering voltage Vt1 ~ 3.83 V, low discharging resistance Rοn 0.26 Ω, low leakage Ileak ~ 0.36 nA, low noise figure NF ~ 0.2 dB, low parasitic capacitance CESD ~ 150 fF, and fast effective response t1 ~ 100 ps. It achieves a very high ~7 V/μm2 ESD protection level.

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