Radiation effects research in the 60's
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[1] D. Wunsch,et al. Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages , 1968 .
[2] V. V. Lint. Radiation-Induced Currents in Coaxial Cables , 1970 .
[3] R. Poll,et al. RADIATION-INDUCED CONDUCTIVITY IN PLASTIC FILMS AT HIGH DOSE RATES , 1965 .
[4] H. Sander. ROOM TEMPERATURE ANNEALING OF SILICON TRANSISTOR PARAMETERS DEGRADED BY A BURST OF NEUTRONS , 1964 .
[5] J. H. Crawford. Factors Influencing the Stability of Radiation Defects in Semiconductors , 1968 .
[6] B. L. Gregory. Minority Carrier Recombination in Neutron Irradiated Silicon , 1969 .
[7] M. J. Bernstein. Radiation Induced Currents in Subminiature Coaxial Cables , 1973 .
[8] Ion mobility measurements in dielectric liquids , 1975 .
[9] H. Eisen,et al. Laser Interferometric Determination of the Dynamic Response of Solids , 1968 .
[10] C. Mallon,et al. Short-Term Annealing in p-Type Silicon , 1970 .
[11] B. L. Gregory,et al. Transient Annealing in Sekiconductor Devices Following Pulsed Neutron Irradiation , 1966 .
[12] G. D. Watkins. A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper , 1969 .
[13] R. Leadon. Model for Short-Term Annealing of Neutron Damage in p-Type Silicon , 1970 .
[14] J. A. Wall,et al. Gamma Dose Distributicns at and near the Interface of Different Materials , 1970 .
[15] J. Fowler,et al. Conductivity induced in Insulating Materials by X-Rays , 1954, Nature.
[16] J. L. Wirth,et al. The Transient Response of Transistors and Diodes to Ionizing Radiation , 1964 .
[17] A. Sattler. IONIZATION PRODUCED BY ENERGETIC SILICON ATOMS WITHIN A SILICON LATTICE , 1965 .
[18] G. C. Messenger. A summary review of displacement damage from high energy radiation in semiconductors and semiconductor devices , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
[19] G. C. Messenger,et al. The Effects of Neutron Irradiation on Germanium and Silicon , 1958, Proceedings of the IRE.
[20] B. R. Gossick,et al. DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS , 1959 .
[21] R. Kepler. Photoconductivity in Organic Molecular Crystals , 1964 .
[22] R. R. Holmes. Carrier Removal in Neviron Irradiated Silicon , 1970 .
[23] H. Stein,et al. INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN n- AND p-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION. , 1968 .
[24] O. Curtis. Effects of Oxygen and Dopant on Lifetime in Neutron-Irradiated Silicon , 1966 .
[25] E. Burke,et al. Ionization, Secondary Emission, and Comptom Currents at Gamma Irradiated Interfaces , 1971 .
[26] H. Stein. COMPARISON OF NEUTRON AND GAMMA-RAY DAMAGE IN n-TYPE SILICON , 1966 .
[27] R. S. Caldwell,et al. Charge-control equivalent circuit for predicting transient radiation effects in transistors , 1964, IEEE Transactions on Communication and Electronics.
[28] J. L. Crowley,et al. Technique for Selection of Transient Radiation-Hard Junction-Isolated Integrated Circuits , 1976, IEEE Transactions on Nuclear Science.
[29] J. Fowler. X-ray induced conductivity in insulating materials , 1956, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[30] R. S. Caldwell,et al. MECHANISM FOR RADIATION-INDUCED LATCHUP IN A MICROCIRCUIT. , 1967 .
[31] G. D. Watkins,et al. Radiation effects in semiconductors , 1971 .
[32] H. A. Schafft,et al. Second breakdown—A comprehensive review , 1967 .
[33] T. Flanagan,et al. Scaling Laws for Ionization Effects in Insulators , 1968 .
[34] R. Oswald. Fracture of Silicon and Germanium Induced by Pulsed Electron Irradiation , 1966 .
[35] G. Derbenwick,et al. Prevention of CMOS Latch-Up by Gold Doping , 1976, IEEE Transactions on Nuclear Science.
[36] E. E. Conrad. Considerations in Establishing a Standard for Neutron Displacement Energy Effects in Semiconductors , 1971 .
[37] J. F. Leavy,et al. Radiation-Induced Integrated Circuit Latchup , 1969 .
[38] P. W. Marshall,et al. Correlation of Particle-Induced Displacement Damage in Silicon , 1987, IEEE Transactions on Nuclear Science.