Requirements for accurate MOS-SOI device simulations

Simulations of the electrical behavior of MOS-SOI devices pose a difficult numerical problem due to the floating substrate region. The numerical analysis techniques required to solve the floating region problem are discussed. Models for the carrier mobilities and lifetime variation with depth into the silicon film are introduced to fit measured SOS device data. The current-voltage characteristics of SOS transistors, including the kink, are accurately simulated and compared to measurements. The floating potential variation with applied gate and drain bias predicted by the simulation is discussed. >

[1]  Ditmar Kranzer,et al.  Spatial dependence of the carrier lifetime in thin films of silicon on sapphire , 1974 .

[2]  A. Rothwarf.  A new quantum mechanical channel mobility model for Si MOSFET's , 1987, IEEE Electron Device Letters.

[3]  M.P. Brassington,et al.  A comparison of fine-dimension silicon-on-sapphire and bulk-silicon complementary MOS devices and circuits , 1985, IEEE Transactions on Electron Devices.

[4]  Andrew H. Sherman,et al.  Algorithms for sparse Gaussian elimination with partial pivoting , 1978, TOMS.

[5]  K. De Meyer,et al.  A charge damping algorithm applied to a Newton solver for solving SOI devices and other ill-conditioned problems , 1987, [1987] NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits.

[6]  Siegfried Selberherr,et al.  MINIMOS—A two-dimensional MOS transistor analyzer , 1980 .

[7]  Y. Saad.  Krylov subspace methods for solving large unsymmetric linear systems , 1981 .

[8]  Alfred C. Ipri,et al.  The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits , 1981 .

[9]  K. Kato,et al.  Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling , 1985, IEEE Journal of Solid-State Circuits.

[10]  K. De Meyer,et al.  Two-dimensional numerical analysis of the floating region in SOI MOSFETs , 1988 .

[11]  Karen J. Reeson,et al.  Hidden depths to devices , 1989 .

[12]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .