InGaAsP High Power Laser Array

Fabrication and performance characteristics of both gain-guided and index-guided laser arrays emitting near 1.3μm are reported. The ten emitter laser arrays have threshold currents in the 300-500 mA range and have been operated to output powers of 600 mW near room temperature. The power output characteristics of these lasers are compared to that of a single emitter device where pulsed output powers of 200 mW have been obtained using a good current confining structure. The phase locked laser arrays exhibit rise and fall times of 1 ns under high current injection and can be modulated at 500 Mb/s.