论文信息 - 0.15 /spl mu/m T-shaped gate fabrication for GaAs MODFET using phase shift lithography

0.15 /spl mu/m T-shaped gate fabrication for GaAs MODFET using phase shift lithography

A new fabrication process of GaAs MODFETs with 0.15 micron T-shaped gate has been developed by using phase shift lithography. Sub-quarter micron footprints of T-shaped gates are defined as line patterns by PEL (pattern-edge line) method using chemically stable positive photoresist. Parasitic capacitances such as C/sub gs/ and C/sub gd/ are also reduced by the air-gap incorporated in the present process. An implemented GaAs MODFET exhibited the NF of 0.36 dB and the gain of 11.5 dB at the frequency of 12 GHz.

D. Ueda | D. Ueda | H. Takenaka | H. Takenaka

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