Single and multiband modeling of quantum electron transport through layered semiconductor devices

Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital basis using the example of the zinc blende lattice. A Dyson equation treatment of the open system boundaries results in a tunneling formula with a generalized Fisher-Lee form for the transmission coefficient that treats injection from emitter continuum states and emitter quasi-bound states on an equal footing. Scattering is then included. Self-energies which include the effects of polar optical phonons, acoustic phonons, alloy fluctuations, interface roughness, and ionized dopants are derived. Interface roughness is modeled as a layer of alloy in which the cations of a given type cluster into islands. Two different treatments of scattering; self-consistent Born and multiple sequential scattering are formulated, described, and analyzed for numerical t...

[1]  H. J. Hagger,et al.  Solid State Electronics , 1960, Nature.

[2]  J. S. Blakemore Semiconductor Statistics , 1962 .

[3]  R. A. Craig Perturbation Expansion for Real‐Time Green's Functions , 1968 .

[4]  C. Caroli,et al.  A direct calculation of the tunnelling current: IV. Electron-phonon interaction effects , 1972 .

[5]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[6]  Daniel S. Fisher,et al.  Relation between conductivity and transmission matrix , 1981 .

[7]  G. Bastard,et al.  Theoretical investigations of superlattice band structure in the envelope-function approximation , 1982 .

[8]  B. Ridley Quantum Processes in Semiconductors , 1982 .

[9]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[10]  Naoki Yokoyama,et al.  Self‐consistent analysis of resonant tunneling current , 1986 .

[11]  Hass,et al.  Molecular coherent-potential approximation for zinc-blende pseudobinary alloys. , 1987, Physical review. B, Condensed matter.

[12]  David E. Miller,et al.  Quantum Statistical Mechanics , 2002 .

[13]  Jasprit Singh,et al.  Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors , 1987 .

[14]  Joel N. Schulman,et al.  Wave Mechanics Applied to Semiconductor Heterostructures , 1991 .

[15]  Nanostructure physics and fabrication : proceedings of the international symposium, College Station, Texas, March 13-15, 1989 , 1989 .

[16]  Role of carrier equilibrium in self-consistent calculations for double barrier resonant diodes , 1990 .

[17]  Supriyo Datta,et al.  A simple kinetic equation for steady-state quantum transport , 1990 .

[18]  Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations , 1991 .

[19]  E. H. Hauge,et al.  Tight-binding approach to resonant tunneling with electron-phonon coupling , 1991 .

[20]  E. Anda,et al.  The role of inelastic scattering in resonant tunnelling heterostructures , 1991 .

[21]  Datta,et al.  Nonequilibrium Green's-function method applied to double-barrier resonant-tunneling diodes. , 1992, Physical review. B, Condensed matter.

[22]  Wilkins,et al.  Resonant tunneling through an Anderson impurity. I. Current in the symmetric model. , 1992, Physical review. B, Condensed matter.

[23]  Meir,et al.  Landauer formula for the current through an interacting electron region. , 1992, Physical review letters.

[24]  Zou,et al.  Inelastic electron resonant tunneling through a double-barrier nanostructure. , 1992, Physical review letters.

[25]  A. Jauho,et al.  Self-consistent modelling of resonant tunnelling structures , 1992 .

[26]  T. Boykin,et al.  X‐valley tunneling in single AlAs barriers , 1992 .

[27]  Theory of interface-roughness scattering in resonant tunneling. , 1993, Physical review. B, Condensed matter.

[28]  F. Chevoir,et al.  Scattering-assisted tunneling in double-barrier diodes: Scattering rates and valley current. , 1993, Physical review. B, Condensed matter.

[29]  Tejedor,et al.  Interband resonant tunneling and transport in InAs/AlSb/GaSb heterostructures. , 1993, Physical review. B, Condensed matter.

[30]  Grein,et al.  Phonon-assisted transport in double-barrier resonant-tunneling structures. , 1993, Physical review. B, Condensed matter.

[31]  Hershfield Reformulation of steady state nonequilibrium quantum statistical mechanics. , 1993, Physical review letters.

[32]  William R. Frensley,et al.  Heterostructures and quantum devices , 1994 .

[33]  Wang,et al.  Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy. , 1994, Physical review letters.

[34]  Interface roughness effects in resonant tunneling structures , 1994 .

[35]  Bowen,et al.  Transmission resonances and zeros in multiband models. , 1995, Physical review. B, Condensed matter.

[36]  Gerhard Klimeck,et al.  Quantum device simulation with a generalized tunneling formula , 1995 .

[37]  Carlo Jacoboni,et al.  Quantum Transport in Ultrasmall Devices: NATO ASI. , 1995 .

[38]  Green's-function study of the electron tunneling in a double-barrier heterostructure. , 1995, Physical review. B, Condensed matter.

[39]  Gerhard Klimeck,et al.  Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode , 1996 .

[40]  K. Ismail,et al.  Quantum Devices and Circuits: Proceedings of the International Conference , 1996 .

[41]  Gerhard Klimeck,et al.  Quantitative simulation of a resonant tunneling diode , 1997, Journal of Applied Physics.