Detailed analysis of high-quality symmetrical octagonal spiral inductors on Si substrate

Research studies of symmetrical spiral inductors for silicon technology have become very important and challenging. In this article, we attempt to give a detailed explanation of how symmetrical spiral inductors help to improve the quality factor (Q) as compared to conventional nonsymmetrical inductors. The experimental results are presented to verify our theory. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.