Time-dependent dielectric breakdown of chemical-vapour-deposited SiO/sub 2/ gate dielectrics

Time-dependent dielectric breakdown (TDDB) data are presented for the first time on 200 AA chemical-vapour-deposited oxide films. The electric-field stress was performed at highly accelerated conditions (11-12 MV/cm). It is found that, owing to its lower defect density, TDDB of CVD oxides is superior to that of thermally grown oxides. >