论文信息 - Thermal properties and thermoelectric microdevices with InN thin films

Thermal properties and thermoelectric microdevices with InN thin films

We report the load characteristics of miniature thermoelectric power devices using InN thin films prepared by reactive radio-frequency (RF) sputtering. The devices are composed of 25-pair and 12-pair InN-chromel films on a SiO"2 glass substrate. The open output voltage and the maximum output power were 0.11V and 2.9x10^-^8W at @DT=262K for the 25-pair device, respectively, and 0.05V and 1.3x10^-^8W at @DT=234K for the 12-pair device, respectively. The open output voltage and the maximum output power were proportional to (@DT)^n (n=1 and 2, respectively).

[1] Brian C. Sales,et al. Thermoelectric Materials: New Approaches to an Old Problem , 1997 .

[2] S. Poon,et al. Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1−xSbx , 2000 .

[3] A. Yamamoto,et al. Thermoelectric properties of Al1−xInxN and Al1−y−zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device , 2003 .

[4] Atsushi Yamamoto,et al. Thermal diffusivity and thermoelectric figure of merit of Al1−xInxN prepared by reactive radio-frequency sputtering , 2003 .

[5] Andrew G. Glen,et al. APPL , 2001 .