Energy-Efficient Hybrid Silicon Electroabsorption Modulator for 40-Gb/s 1-V Uncooled Operation

This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80^°C . This 100-μm-long modulator has a 3-dB bandwidth of 30 GHz. Eye diagrams measured at the temperatures of 20^°C , 40^°C, 60 ^°C, and 80^°C with corresponding adjustment on the input wavelength and the bias voltage show a dynamic extinction ratio of around 5 dB at 40 Gb/s with a 1-V drive voltage swing and an energy consumption of 112 fJ/bit.