论文信息 - Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation - 字舞流文

Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

R. Thewes | W. Weber | C. Schlunder | R. Brederlow | D. Schmitt-Landsiedel | G. Walter | A. von Schwerin | R. Jurk | C. Linnenbank | G. Lengauer