论文信息 - Drift mobility and photoluminescence measurements on high resistivity Cd1−xZnxTe crystals grown from Te-Rich solution - 字舞流文

Drift mobility and photoluminescence measurements on high resistivity Cd1−xZnxTe crystals grown from Te-Rich solution

Kazuhiko Suzuki | T. Sawada | S. Seto | S. Dairaku | K. Imai | N. Takojima

[1] D. Chattopadhyay. Electron mobility in Cd0.8Zn0.2Te , 1994 .

[2] Arnold Burger,et al. Charge‐carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors , 1993 .

[3] M. Kawashima,et al. Carrier drift mobilities and PL spectra of high resistivity Cadmium Telluride , 1990 .

[4] Mathieu,et al. Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices. , 1988, Physical review. B, Condensed matter.

[5] J. Kennedy,et al. Evidence for bond strengthening in Cd1−xZnxTe (x=0.04) , 1985 .

[6] R. Bell,et al. Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray Detectors , 1974 .

[7] C. Jacoboni,et al. Hole Transport in Polar Semiconductors , 1972 .

[8] S. M. Sze,et al. Physics of semiconductor devices , 1969 .