RD50 Collaboration recent results on developing very high radiation resistant silicon detectors

For the luminosity upgrade of the Large Hadron Coll ider (SLHC), the present LHC experiment tracking systems, based on semiconductor detectors, need to be replaced. The new challenge will be the extreme radiation hardness re qui ment of up to 1×10 16 neq/cm . The detectors will suffer from high radiation damag e during their life time and will require radiation hard technologies to guarantee accurate t ck reconstruction. Current silicon sensors can operate up to 10 15 neq/cm 2 because their radiation degradation could be balan ced by increasing the oxygen amount of Float-Zone silicon substrates and high operating voltages are possible due to multi guard-rings geometry. Such de vices are installed and running in the CERN Large Hadrons Collider (LHC) experiments. In the fr ame of the RD50-CERN Collaboration much work is in progress to extend this limit to 10 16 neq/cm 2 in order to use silicon technology also in experiments at the proposed SLHC. This pape r pr sents recent results of the RD50Collaboration on radiation hard technologies develo p d on Float Zone, epitaxial and Magnetic Czochralski nand p-type silicon sensors. Their ch arge collection efficiency after proton, neutron and mixed irradiation has been determined a d new technology 3D detectors have been produced and studied as well. For high fluences mic roscopic defects have been also investigated and compared to the detection capability of the irr adiated sensors.