A study of EB pattern writer system design for 22-nm node and beyond

The optical lithography still remains to be the mainstream coupled with RETs (resolution enhancement techniques) because of the various and serious difficulties other NGL candidates (Electron beam direct writing, EUV and etc.) are facing now. Development of OPC have made pattern data complexity large so that increasing rate of pattern data volume is higher than the number of transistors in a chip. We studied key issues of development of mask writer especially for throughput.