Understanding pattern collapse in high-resolution lithography: impact of feature width on critical stress
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Clifford L. Henderson | Cheng-Tsung Lee | David E. Noga | Richard A. Lawson | Laren M. Tolbert | C. Henderson | Cheng-Tsung Lee | L. Tolbert | D. Noga
[1] Kwon Taek Lim,et al. Surfactant-aided supercritical carbon dioxide drying for photoresists to prevent pattern collapse , 2007 .
[2] J. Simon,et al. Overcoming pattern collapse of ultra high resolution dense lines obtained with EUV resists , 2005, SPIE Advanced Lithography.
[3] 裕幸 飯田,et al. International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について - , 2004 .
[4] Bryan D. Vogt,et al. Elastic Moduli of Ultrathin Amorphous Polymer Films , 2006 .
[5] Harun H. Solak,et al. Overcoming pattern collapse on e-beam and EUV lithography , 2006, SPIE Advanced Lithography.
[6] Kenji Kurihara,et al. Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water , 1995 .
[7] Leonidas E. Ocola,et al. Deformation of Nanoscopic Polymer Structures in Response to Well‐Defined Capillary Forces , 2003 .
[8] Karina Grundke,et al. The adsorption of cationic surfactants on photoresist surfaces and its effect on the pattern collapse in high aspect ratio patterning , 2007 .