Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

Abstract For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin–orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin–orbit interaction parameter, α , we measured Shubnikov–de Haas (SdH) oscillations at 1.5 K . We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni 40 Fe 60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼0.1% as well as a resistance hysteresis behavior of ∼12% in non-local geometry below 20 K . These results are the first step to realize an active spintronic device, such as spin-FET.