In the very long wavelength infrared (VLWIR) band, λ>14 microns, the detector materials are currently limited to extrinsic semiconductors. These extrinsic materials can be either heavily doped bulk semiconductor, like silicon or germanium, or a doped quantum well heterostructure. An alternative choice that provides the opportunity for higher temperature operation for VLWIR sensing is an intrinsic material based on a type-II InAs/Ga(In)Sb superlattice. There are many possible designs for these superlattices which will produce the same narrow band gap by adjusting individual layer thicknesses, indium content or substrate orientation. The infrared properties of various compositions and designs of these type-II superlattices have been studied. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection beyond 15 microns. An overview of the status of this material system will be presented. In addition, the latest experimental results for superlattice photodiodes with cut-off wavelengths as long as 30 microns will be covered.