Computing entries of the inverse of a sparse matrix using the FIND algorithm

An accurate and efficient algorithm, called fast inverse using nested dissection (FIND), for computing non-equilibrium Green's functions (NEGF) for nanoscale transistors has been developed and applied in the simulation of a novel dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) device structure. The method is based on the algorithm of nested dissection. A graph of the matrix is constructed and decomposed using a tree structure. An upward and downward traversal of the tree yields significant performance improvements for both the speed and memory requirements, compared to the current state-of-the-art recursive methods for NEGF. This algorithm is quite general and can be applied to any problem where certain entries of the inverse of a sparse matrix (e.g., its diagonal entries, the first row or column, etc.) need to be computed. As such it is applicable to the calculation of the Green's function of partial differential equations. FIND is applicable even when complex boundary conditions are used, for example non reflecting boundary conditions.

[1]  Keith Bowden A DIRECT SOLUTION TO THE BLOCK TRIDIAGONAL MATRIX INVERSION PROBLEM , 1989 .

[2]  W. F. Tinney,et al.  On computing certain elements of the inverse of a sparse matrix , 1975, Commun. ACM.

[3]  Gerhard Klimeck,et al.  Single and multiband modeling of quantum electron transport through layered semiconductor devices , 1997 .

[4]  J. Varah The calculation of the eigenvectors of a general complex matrix by inverse iteration , 1968 .

[5]  Jim Hefferon,et al.  Linear Algebra , 2012 .

[6]  James Hardy Wilkinson,et al.  Linear algebra , 1971, Handbook for automatic computation.

[7]  D. Vasileska,et al.  Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation , 2005, IEEE Transactions on Electron Devices.

[8]  Alston S. Householder,et al.  Handbook for Automatic Computation , 1960, Comput. J..

[9]  พงศ์ศักดิ์ บินสมประสงค์,et al.  FORMATION OF A SPARSE BUS IMPEDANCE MATRIX AND ITS APPLICATION TO SHORT CIRCUIT STUDY , 1980 .

[10]  Atta,et al.  Nanoscale device modeling: the Green’s function method , 2000 .

[11]  M. Anantram,et al.  Two-dimensional quantum mechanical modeling of nanotransistors , 2001, cond-mat/0111290.

[12]  J. Schröder,et al.  Reduktionsverfahren für Differenzengleichungen bei Randwertaufgaben I , 1974 .

[13]  G. G. Shahidi,et al.  SOI technology for the GHz era , 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).

[14]  H.-S. Philip Wong Beyond the conventional transistor , 2002, IBM J. Res. Dev..

[15]  J. Welser,et al.  NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[16]  Gene H. Golub,et al.  On direct methods for solving Poisson's equation , 1970, Milestones in Matrix Computation.

[17]  J. H. Wilkinson,et al.  Inverse Iteration, Ill-Conditioned Equations and Newton’s Method , 1979 .

[18]  J. H. Wilkinson,et al.  Handbook for Automatic Computation: Linear Algebra (Grundlehren Der Mathematischen Wissenschaften, Vol 186) , 1986 .

[19]  J. H. Wilkinson,et al.  The Calculation of Specified Eigenvectors by Inverse Iteration , 1971 .

[20]  A. George Nested Dissection of a Regular Finite Element Mesh , 1973 .

[21]  Konstantin K. Likharev,et al.  Nanoscale SOI MOSFETs: a comparison of two options , 2004 .

[22]  Mark Lundstrom,et al.  Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study , 2004 .

[23]  Ulrich Trottenberg,et al.  On fast poisson solvers and applications , 1978 .