Quadrature squeezed light generation by cross-phase modulation in semiconductors.

We have generated pulsed quadrature squeezed light by cross-phase modulation in the single-crystal zinc-blende semiconductor ZnSe at 960 nm. Squeezing levels of at least 0.3 dB are measured (0.7 dB inferred at the crystal) with pulse widths of less than 100 fs. The technique is straightforward and should be readily applicable to other semiconductors, including waveguide structures.