论文信息 - 1.5 µm MQW semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain - 字舞流文

1.5 µm MQW semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain

A tensile/compressive MQW amplifier shows good polarization insensitivity over a 100 nm bandwidth at 1.5 µm. This amplifer can be integrated in photonic circuits which require polarization-independent gain. @@Summary

U. Koren | B. Miller | M. Young | M. Newkirk | M. Chien | C. Burrus | R. Jopson | B. Miller

[1] U. Koren,et al. High-speed multiple-quantum-well optical power amplifier , 1992, IEEE Photonics Technology Letters.

[2] H. Presby,et al. Near 100% efficient fibre microlenses , 1992 .

[3] Y. Noguchi,et al. 1.55 mu m polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier , 1991, IEEE Photonics Technology Letters.

[4] U. Koren,et al. Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers , 1991 .

[5] Uziel Koren,et al. Semiconductor photonic integrated circuits , 1991, Integrated Photonics Research.

[6] D. M. Cooper,et al. Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power , 1990 .

[7] Gregory Raybon,et al. Large- and small-signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers , 1990 .

[8] Gregory Raybon,et al. Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth , 1988 .

[9] Masamichi Yamanishi,et al. Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers , 1984 .