论文信息 - Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

[1] A. Kurdoghlian,et al. GaN HFET for W-band Power Applications , 2006, 2006 International Electron Devices Meeting.

[2] John A. Higgins,et al. High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates , 1998 .

[3] M.B. Das. Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures , 1987, IEEE Transactions on Electron Devices.

[4] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .

[5] James S. Speck,et al. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors , 2000 .

[6] Peter H. Ladbrooke,et al. MMIC Design GaAs FETs and HEMTs , 1989 .

[7] Y.-F. Wu,et al. Measured microwave power performance of AlGaN/GaN MODFET , 1996, IEEE Electron Device Letters.

[8] Walter Kruppa,et al. Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .

[9] A. Soltani,et al. Analysis of trap states effects on the frequency-dependent capacitance and conductance of an AlGaN/GaN heterostructure , 2008, 2008 2nd International Conference on Signals, Circuits and Systems.

[10] Stephen J. Pearton,et al. Fabrication and performance of GaN electronic devices , 2000 .

[11] R. Kaur,et al. Capacitance modeling of 120nm AlGaN/GaN HEMT for microwave and high speed circuit applications , 2008, 2008 Asia-Pacific Microwave Conference.