Selected-area electron-channeling pattern as a characterization method for heteroepitaxial layers

[1]  A. P. Curtis,et al.  GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates , 1997 .

[2]  Hadis Morkoç,et al.  Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells , 1997 .

[3]  Hidenao Tanaka,et al.  Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate , 1997 .

[4]  Y. Kadota,et al.  7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C , 1997 .

[5]  E. J. Lerner.  Optoelectronic integrated circuits promise simplicity , 1997 .

[6]  A. Schlachetzki,et al.  The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si , 1996 .

[7]  Chih‐Hao Lee,et al.  X‐ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers , 1996 .

[8]  A. Schlachetzki,et al.  The effect of dislocations on the transport properties of III/V-compound semiconductors on Si , 1995 .

[9]  Shu Kong So,et al.  Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy , 1995 .

[10]  J. Pankove,et al.  Study of defect states in GaN films by photoconductivity measurement , 1995 .

[11]  A. Schlachetzki,et al.  Automatic counting of etch Pits in InP , 1992 .

[12]  D. C. Walters,et al.  Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C , 1992 .

[13]  Y. Itoh,et al.  The effect of V/III ratio on the initial layer of GaAs on Si , 1992 .

[14]  W. Gerberich,et al.  Effects of tetragonal distortion in thin expitaxic films on electron channeling patterns in scanning electron microscopy , 1991 .

[15]  M. Umeno,et al.  Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition , 1991 .

[16]  B. Dodson.  Stress accomodation in large-mismatch systems , 1991 .

[17]  R. Fastow,et al.  Quantitative electron channeling measurements for high sensitivity surface analysis , 1990 .

[18]  M. Yamaguchi,et al.  Heteroepitaxial growth and characterization of InP on Si substrates , 1990 .

[19]  D. Vignaud,et al.  Dislocation energy bands in GaAs: An optical absorption study , 1990 .

[20]  Yoshiaki Kadota,et al.  Heteroepitaxy of InP on Si Substrates by MOCVD , 1989 .

[21]  M. Yamaguchi,et al.  Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates , 1989 .

[22]  Y. Kido,et al.  Universal relation between electron channeling line intensity and thickness of disordered layers on single crystals , 1988 .

[23]  B. Davidson,et al.  Improvements in the heteroepitaxy of GaAs on Si , 1987 .

[24]  E. Wolf,et al.  MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE , 1970 .