论文信息 - Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

We report on the influence of deep pits on three terminal-off breakdown of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-in. silicon by metalorganic chemical vapor deposition (MOCVD). For devices with deep pits, the breakdown was greatly affected by excess leakage through buffer and substrate. The reason for excess leakage was established using transmission electron microscope (TEM) image. The TEM image reveals that deep pits originate from silicon substrate because of Ga etching Si substrate at high growth temperatures. These etch pits and their surface termination in the form of hexagonal pyramid pits act like micro-pipes causing high leakage through the substrate and buffer. The three terminal-off breakdown of the HEMTs decreased rapidly as the density of deep pits increase.

S. Lawrence Selvaraj | Takashi Egawa | Takaaki Suzue

[1] H. Okumura,et al. Correlation between micropipes on SiC substrate and dc characteristics of AlGaN∕GaN high-electron mobility transistors , 2006 .

[2] T. Egawa,et al. AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics , 2007 .

[3] T. Egawa,et al. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers , 2009, IEEE Electron Device Letters.

[4] M. Iwami,et al. Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer , 2006 .

[5] Ho-Young Cha,et al. The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate , 2006, IEEE Transactions on Electron Devices.