Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

We discuss the room temperature annealing of Floating Gate errors in Flash memories with NAND and NOR architecture after heavy-ion irradiation. We present the evolution of raw bit errors as a function of time after the exposure, examining the annealing dependence on the particle LET, cell feature size, and, for Multi Level Cells, on the program level. The results are explained based on the statistical properties of the cell threshold voltage distributions before and after heavy-ion strikes.

[1]  Alessandro Paccagnella,et al.  Radiation effects on floating-gate memory cells , 2001 .

[2]  C. Frost,et al.  Neutron-induced soft errors in advanced flash memories , 2008, 2008 IEEE International Electron Devices Meeting.

[3]  Carla Golla,et al.  Flash Memories , 1999 .

[4]  A. Visconti,et al.  Secondary Effects of Single Ions on Floating Gate Memory Cells , 2006, IEEE Transactions on Nuclear Science.

[5]  H. E. Boesch,et al.  Reversibility of trapped hole annealing , 1988 .

[6]  R. Harboe-Sorensen,et al.  Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions , 2008, IEEE Transactions on Nuclear Science.

[7]  Allan H. Johnston,et al.  Radiation effects on advanced flash memories , 1999 .

[8]  P. Murray,et al.  SEE and TID test results of 1 Gb flash memories , 2004, 2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774).

[9]  J. Barak,et al.  Ion Track Structure and Dynamics in SiO $_{2}$ , 2007, IEEE Transactions on Nuclear Science.

[10]  R. Harboe-Sorensen,et al.  Effect of Ion Energy on Charge Loss From Floating Gate Memories , 2008, IEEE Transactions on Nuclear Science.

[11]  A. Visconti,et al.  Error Instability in Floating Gate Flash Memories Exposed to TID , 2009, IEEE Transactions on Nuclear Science.

[12]  D.N. Nguyen,et al.  Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Flash Memories , 2007, IEEE Transactions on Nuclear Science.

[13]  H.S. Kim,et al.  SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory , 2006, IEEE Transactions on Nuclear Science.

[14]  T. R. Oldham,et al.  Proton and Heavy-Ion Radiation Damage Studies in MOS Transistors , 1985, IEEE Transactions on Nuclear Science.

[15]  D.N. Nguyen,et al.  Microdose Induced Data Loss on Floating Gate Memories , 2006, IEEE Transactions on Nuclear Science.

[16]  P. Garnier,et al.  Total dose failures in advanced electronics from single ions , 1993 .

[17]  H. R. Schwartz,et al.  Single-event upset in flash memories , 1997 .

[18]  M.D. Berg,et al.  Compendium of Recent Single Event Effects Results for Candidate Spacecraft Electronics for NASA , 2008, 2008 IEEE Radiation Effects Data Workshop.

[19]  R. Harboe-Sorensen,et al.  Annealing of Static data Errors in NAND-Flash memories , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.