论文信息 - Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene) - 字舞流文

Fabrication and Characteristics of Schottky Gated Field Effect Transistors Utilizing Poly(1,4-naphthalene vinylene) and Poly(p-phenylene vinylene)

K. Yoshino | Y. Ohmori | K. Muro | M. Onoda | Katsumi Yoshino Katsumi Yoshino | Keiro Muro