论文信息 - About the Low-Temperature Dependence of Activation for Capture Cross-Sections of Charge Carriers in Semiconductors with Persistent Photoconductivity - 字舞流文

About the Low-Temperature Dependence of Activation for Capture Cross-Sections of Charge Carriers in Semiconductors with Persistent Photoconductivity

A. Belousov | V. A. Kovarskii | L. V. Chernysh

[1] H. Queisser,et al. Hall-Effect Analysis of Persistent Photocurrents in n-GaAs Layers , 1979 .

[2] D. Lang,et al. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors , 1977 .

[3] R. Nelson. Long‐lifetime photoconductivity effect in n‐type GaAlAs , 1977 .