AlGaN/GaN HEMT with over 110 W Output Power for X-Band

AlGaN/GaN HEMT using field plate and recessed gate for X-band application was developed on SiC substrate. Internal matching circuits were designed to achieve high gain at 8 GHz for the developed device with single chip and four chips combining, respectively. The internally matched 5.52 mm single chip AlGaN/GaN HEMT exhibited 36.5 W CW output power with a power added efficiency (PAE) of 40.1% and power density of 6.6 W/mm at 35 V drain bias voltage (Vds). The device with four chips combining demonstrated a CW over 100 W across the band of 7.7-8.2 GHz, and an maximum CW output power of 119.1 W with PAE of 38.2% at Vds =31.5 V. This is the highest output power for AlGaN/GaN HEMT operated at X-band to the best of our knowledge.

[1]  S. Sano,et al.  A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz , 2006, 2006 European Microwave Integrated Circuits Conference.

[2]  Y. Isota,et al.  C-band GaN HEMT Power Amplifier with 220W Output Power , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3]  S. Sano,et al.  A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application , 2007, 2007 European Microwave Integrated Circuit Conference.

[4]  Chen Tangsheng,et al.  AlGaN/GaN MIS HEMT with AlN Dielectric , 2006 .

[5]  T. Takagi,et al.  S and C band over 100 W GaN HEMT 1-chip high power amplifiers with cell division configuration , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[6]  P. C. Chao,et al.  C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers , 1993, 15th Annual GaAs IC Symposium.