Single-shot excimer laser annealing of PECVD amorphous silicon

In this paper, different aspects of this annealing process using Single Shot high power Excimer Laser Annealing technique are examined successively. The energy density is optimized using Spectroscopic Ellipsometry technique. The crystallinity and roughness of the layers are characterized in addition to the layer thickness. The interest of large size laser beam is examined more precisely measuring the crystallinity in the transition zone between two laser shots. Finally the homogeneity of the layer is checked electrically by mapping the surface of a laser shot with TFT characteristics.