论文信息 - Comparison between Ge and InGaAs APDs in the 1 to 2 /spl mu/m wavelength range

Comparison between Ge and InGaAs APDs in the 1 to 2 /spl mu/m wavelength range

Ge and InGaAs avalanche photodiodes are suitable for lidar application at 1, 1.3 and 1.55 /spl mu/m wavelengths. A comparison between the two devices is presented, which addresses quantum efficiency, responsivity, dark current, noise and detectivity.

T.F. Refaat | U.N. Singh | M.N. Abedin

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