论文信息 - Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures

Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures

Photovoltaic properties of the Bi/sub 4/Ti/sub 3/O/sub 12//Si heterostructures were investigated in the 250-1100 nm wavelength range. Four bands centered on 400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized spectral distributions. The relative amplitude of the peaks corresponding to these bands depends on the annealing temperature and ferroelectric polarization.

[1] U. Gösele,et al. Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding , 1997 .

[2] V. Dragoi,et al. Indirect enhancement of PbS photoconductivity by ferroelectric field effect in a PbS/PbTiO3/Si heterostructure , 1997 .

[3] D. Dimos,et al. Polarization-induced trapped charge in ferroelectrics , 1997 .

[4] Y. Yoon,et al. Structural properties and interfacial layer formation mechanisms of PbTiO3 thin films grown on p‐Si substrates , 1994 .

[5] John D. Mackenzie,et al. The self‐biased heterojunction effect of ferroelectric thin film on silicon substrate , 1990 .

[6] S. Senz,et al. Physical properties of spin-on solution deposited Bi4Ti3O12 thin films on Si substrates , 1997 .

[7] R.L. Anderson. Experiments on Ge-GaAs heterojunctions , 1962, IRE Transactions on Electron Devices.

[8] Yukio Watanabe. Epitaxial all‐perovskite ferroelectric field effect transistor with a memory retention , 1995 .

[9] Photoelectric Properties of PbTiO 3 /Si Heterostructures , 1996 .

[10] M. Toyoda,et al. Ferroelectric Properties and Fatigue Characteristics of Bi4Ti3O12 Thin Films by Sol-Gel Processing , 1994 .

[11] A. Grishin,et al. Ferroelectric/superconductor PbZr0.52Ti0.48O3/Y1Ba2Cu3O7−x/LaAlO3 heterostructure prepared by Nd:YAG pulsed laser deposition , 1994 .