论文信息 - 1.55 µm GaInAsP/InP Distributed Feedback Lasers

1.55 µm GaInAsP/InP Distributed Feedback Lasers

Room temperature operation of 1.55 µm GaInAsP/InP distributed feedback lasers is reported. The laser was fabricated by a single LPE growth cycle on a corrugated substrate. Single longitudinal and transverse mode oscillation was observed up to 1.7 times the threshold current. The temperature dependence of lasing wavelength was about 0.09 nm/deg.

Osamu Mikami | O. Mikami

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