CO2 laser induced temperature profiles in n-GaAs: An analytical model probed with the Seebeck effect
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[1] J. C. Jaeger,et al. Conduction of Heat in Solids , 1952 .
[2] Gennady Shkerdin,et al. Comparative study of the intra- and intervalley contributions to the free-carrier induced optical nonlinearity in n-GaAs , 1999 .
[3] Sadao Adachi,et al. Properties of Group-IV, III-V and II-VI Semiconductors: Adachi/Properties of Group-IV, III-V and II-VI Semiconductors , 2005 .
[4] J. Stiens,et al. Influence of leaky waves on free-electron-induced nonlinear reflection properties of highly doped n-GaAs layer at medium IR-wavelengths , 2001 .
[5] J. Stiens,et al. X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs , 2002 .
[6] J. S. Blakemore. Semiconducting and other major properties of gallium arsenide , 1982 .
[7] A. D'Amico,et al. Detection of optical and infrared radiation , 1980 .
[8] Rajeev J Ram,et al. Bias-dependent Peltier coefficient and internal cooling in bipolar devices , 2002 .
[9] R. J. Keyes. Optical and Infrared Detectors , 1977 .
[10] R. Kingston. The Ideal Photon Detector , 1978 .
[11] Henry Levinstein,et al. Detection of Optical and Infrared Radiation , 1978 .