Study on the chemical compatibility of O-SiC_P/Fe

The dense oxide film of about 0.6μm is formed on the surface of the SiC particles by passive oxidation, when the SiC particles were treated at 1200℃ for 10h in a stationary air ambient. The film was determined to be β cristobalite using XRD. After treated at 1150℃ for 1h in a hydrogen ambient, the interfacial reaction of 3SiC P/Fe produces Fe 3Si and graphite grains to form the reaction zone in situ, and Fe 3C at the crystal boundary of the metal matrix to construct the flake pearlite. The interfacial reaction of 10SiC P/Fe is more severe due to increasing the reinforcement. It results in that the SiC particles are consumed completely, and the reaction zone of Fe 3Si containing the random graphite precipitates forms in situ. The metal matrix of the composite is brittle due to its high Si content. The oxidation film on the oxidized SiC particles can inhibit the reaction between SiC and Fe in 3O SiC P/Fe or 10O SiC P/Fe in terms of isolating SiC and Fe and inhibiting the interdiffusion of the Si, C and Fe atoms, which improves the interface chemical compatibility of O SiC P/Fe.