The origin of dislocation climb during laser operation

The origin of the dislocation climb which takes place in the presence of electron‐hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition, completely isolated interstitial loops can form which also have the characteristic climb appearance of the larger dipoles. Existing theories for the origin of the interstitials required to account for the observed climb are considered in detail, and it is concluded that the climb structures can best be explained by the emission of both gallium and arsenic vacancies from the dislocation as a consequence of nonradiative processes occurring at the dislocation core.

[1]  A. Cottrell,et al.  Dislocation Theory of Yielding and Strain Ageing of Iron , 1949 .

[2]  B. Eyre.  Transmission electron microscope studies of point defect clusters in fcc and bcc metals , 1973 .

[3]  B. Miller,et al.  Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers , 1973 .

[4]  P. Petroff,et al.  Defect structure introduced during operation of heterojunction GaAs lasers , 1973 .

[5]  P. Petroff,et al.  Rapid degradation phenomenon in heterojunction GaAlAs-GaAs lasers , 1974 .

[6]  P. Hutchinson,et al.  Defect structure of degraded GaAlAs-GaAs double heterojunction lasers , 1975 .

[7]  Koichi Ishida,et al.  Rapid Degradation in Double-Heterostructure Lasers. II. Semiquantitative Analyses on the Propagation of Dark Line Defects , 1975 .

[8]  P. Hutchinson,et al.  Interstitial condensation in n+ GaAs , 1975 .

[9]  G. Woolhouse.  Degradation in injection lasers , 1975 .

[10]  J. V. Vechten.  Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers , 1975 .

[11]  Koichi Ishida,et al.  Rapid Degradation in Double-Heterostructure Lasers. I. Proposal of a New Model for the Directional Growth of Dislocation Networks , 1975 .

[12]  P. Hutchinson,et al.  Defect structure of degraded heterojunction GaAlAs−GaAs lasers , 1975 .

[13]  Lionel C. Kimerling,et al.  Dislocation climb model in compound semiconductors with zinc blende structure , 1976 .

[14]  R. Torguet,et al.  Ultrafast echotomographic system using optical processing of ultrasonic signals , 1977 .