Large-Area 2-D Electronics: Materials, Technology, and Devices
暂无分享,去创建一个
Madan Dubey | Xu Zhang | Jing Kong | Tomás Palacios | Han Wang | Allen Hsu | Ki Kang Kim | Yong Cheol Shin | Benjamin Mailly | Lili Yu | Yumeng Shi | Yi Hsien Lee | J. Kong | T. Palacios | Y. C. Shin | M. Dubey | Ki Kang Kim | Lili Yu | Han Wang | Yumeng Shi | Yi-Hsien Lee | A. Hsu | Xu Zhang | Benjamin Mailly | Yi‐Hsien Lee
[1] Jun Fujii,et al. Graphene synthesis on cubic SiC/Si wafers. perspectives for mass production of graphene-based electronic devices. , 2010, Nano letters.
[2] Robert Kershaw,et al. The preparation of and electrical properties of niobium selenide and tungsten selenide , 1967 .
[3] M. Wakabayashi,et al. Atomic Structure of Monolayer Graphite Formed on Ni(111) , 1996 .
[4] Kourosh Kalantar-Zadeh,et al. Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. , 2012, Nanoscale.
[5] Kang L. Wang,et al. A chemical route to graphene for device applications. , 2007, Nano letters.
[6] T. Taniguchi,et al. Boron nitride substrates for high mobility chemical vapor deposited graphene , 2011, 1105.4938.
[7] T. Taniguchi,et al. BN/Graphene/BN Transistors for RF Applications , 2011, IEEE Electron Device Letters.
[8] Q. Fu,et al. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum , 2012, Nature Communications.
[9] F. Xia,et al. The origins and limits of metal-graphene junction resistance. , 2011, Nature nanotechnology.
[10] U Zeitler,et al. Room-Temperature Quantum Hall Effect in Graphene , 2007, Science.
[11] H. Sachdev,et al. Synthesis of One Monolayer of Hexagonal Boron Nitride on Ni(111) from B‐Trichloroborazine (ClBNH)3. , 2004 .
[12] Wengui Weng,et al. Preparation of polystyrene–graphite conducting nanocomposites via intercalation polymerization , 2001 .
[13] Mikael Syväjärvi,et al. Homogeneous large-area graphene layer growth on 6H-SiC(0001) , 2008 .
[14] S. Nguyen,et al. Graphene oxide, highly reduced graphene oxide, and graphene: versatile building blocks for carbon-based materials. , 2010, Small.
[15] D. R. Edmondson. Electronic band structure of the layer-type crystal 2HMoS2 , 1972 .
[16] Kazuhito Tsukagoshi,et al. Low operating bias and matched input-output characteristics in graphene logic inverters. , 2010, Nano letters.
[17] P M Campbell,et al. Low-Phase-Noise Graphene FETs in Ambipolar RF Applications , 2011, IEEE Electron Device Letters.
[18] K. Jenkins,et al. Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz , 2009, IEEE Electron Device Letters.
[19] Sokrates T. Pantelides,et al. Molecular doping of graphene with ammonium groups , 2012 .
[20] E. Boellaard,et al. The formation of filamentous carbon on iron and nickel catalysts : II. Mechanism , 1985 .
[21] Jacek Klinowski,et al. Structure of Graphite Oxide Revisited , 1998 .
[22] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[23] Guo-Hua Hu,et al. A new process of fabricating electrically conducting nylon 6/graphite nanocomposites via intercalation polymerization , 2000 .
[24] Mark S. Lundstrom,et al. Substrate Gating of Contact Resistance in Graphene Transistors , 2011, IEEE Transactions on Electron Devices.
[25] R. Ruoff,et al. Chemical methods for the production of graphenes. , 2009, Nature nanotechnology.
[26] Jing Kong,et al. Gigahertz ambipolar frequency multiplier based on CVD graphene , 2010, 2010 International Electron Devices Meeting.
[27] James M Tour,et al. Diazonium functionalization of surfactant-wrapped chemically converted graphene sheets. , 2008, Journal of the American Chemical Society.
[28] C. N. R. Rao,et al. Covalent and Noncovalent Functionalization and Solubilization of Graphene , 2009 .
[29] D.D.L. Chung,et al. Exfoliation of graphite , 1987 .
[30] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[31] E. Yoo,et al. Large reversible Li storage of graphene nanosheet families for use in rechargeable lithium ion batteries. , 2008, Nano letters.
[32] Hiroki Hibino,et al. Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces , 2010 .
[33] M. Chhowalla,et al. A review of chemical vapour deposition of graphene on copper , 2011 .
[34] Jun Lou,et al. Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.
[35] D. Goldhaber-Gordon,et al. Contact resistance and shot noise in graphene transistors , 2008, 0810.4568.
[36] Fengnian Xia,et al. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.
[37] S. Banerjee,et al. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric , 2009, 0901.2901.
[38] Yuan Taur,et al. Source—Drain contact resistance in CMOS with self-aligned TiSi2 , 1987, IEEE Transactions on Electron Devices.
[39] Jing Kong,et al. Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition. , 2010, Nano letters.
[40] J. Kysar,et al. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene , 2008, Science.
[41] W. D. de Heer,et al. The growth and morphology of epitaxial multilayer graphene , 2008 .
[42] J. Brink,et al. Doping graphene with metal contacts. , 2008, Physical review letters.
[43] Oshima,et al. Charge-transfer mechanism for the (monolayer graphite) /Ni(111) system. , 1992, Physical review. B, Condensed matter.
[44] Jong-Hyun Ahn,et al. Chemical vapor deposition-grown graphene: the thinnest solid lubricant. , 2011, ACS nano.
[45] K. Novoselov,et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. , 2011, Nano letters.
[46] J. Shan,et al. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. , 2009, Physical review letters.
[47] A. Karu,et al. Pyrolytic Formation of Highly Crystalline Graphite Films , 1966 .
[48] J. Kong,et al. Anisotropic etching and nanoribbon formation in single-layer graphene. , 2009, Nano letters (Print).
[49] K. Shepard,et al. Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.
[50] John W. Connell,et al. Soluble, Exfoliated Hexagonal Boron Nitride Nanosheets , 2010 .
[51] N. Yokoyama,et al. A polarity-controllable graphene inverter , 2010 .
[52] Takashi Taniguchi,et al. Doping of hexagonal boron nitride via intercalation: A theoretical prediction , 2010 .
[53] M. Capano,et al. Graphene formation mechanisms on 4H-SiC(0001) , 2009 .
[54] C. N. R. Rao,et al. Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene , 2009, 0902.3077.
[55] M. Dresselhaus,et al. Intercalation compounds of graphite , 1981 .
[56] Hirokazu Fukidome,et al. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111) , 2010, Nanoscale research letters.
[57] Gianaurelio Cuniberti,et al. Direct low-temperature nanographene CVD synthesis over a dielectric insulator. , 2010, ACS nano.
[58] Hirokazu Fukidome,et al. Epitaxial Growth Processes of Graphene on Silicon Substrates , 2010 .
[59] C. Berger,et al. Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene. , 2008, Physical review letters.
[60] Jinyeong Lee,et al. Large-scale synthesis of high-quality hexagonal boron nitride nanosheets for large-area graphene electronics. , 2012, Nano letters.
[61] Jeffrey Bokor,et al. Direct chemical vapor deposition of graphene on dielectric surfaces. , 2010, Nano letters.
[62] S. Stankovich,et al. Preparation and characterization of graphene oxide paper , 2007, Nature.
[63] S. Stankovich,et al. Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide , 2007 .
[64] Peide D. Ye,et al. The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition , 2012 .
[65] Wenjuan Zhu,et al. Silicon nitride gate dielectrics and band gap engineering in graphene layers. , 2010, Nano letters.
[66] Feng Wang,et al. Gate-Variable Optical Transitions in Graphene , 2008, Science.
[67] Jansen,et al. Electronic interlayer states in hexagonal boron nitride. , 1985, Physical review. B, Condensed matter.
[68] Fengnian Xia,et al. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. , 2009, Nano letters.
[69] R. A. Bromley. A semi-empirical tight-binding calculation of the band structure of MoS2 , 1970 .
[70] H. Handa,et al. Epitaxial graphene field effect transistors on silicon substrates , 2009, 2009 Proceedings of the European Solid State Device Research Conference.
[71] F. Xia,et al. High-frequency, scaled graphene transistors on diamond-like carbon , 2011, Nature.
[72] P. Kim,et al. Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.
[73] Oshima,et al. Anomalous bond of monolayer graphite on transition-metal carbide surfaces. , 1990, Physical review letters.
[74] Xinran Wang,et al. Etching and narrowing of graphene from the edges. , 2010, Nature chemistry.
[75] Maki Suemitsu,et al. Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate , 2009 .
[76] Guohua Chen,et al. Exfoliation of graphite flake and its nanocomposites , 2003 .
[77] J. Coleman,et al. High-yield production of graphene by liquid-phase exfoliation of graphite. , 2008, Nature nanotechnology.
[78] F. Guinea,et al. The electronic properties of graphene , 2007, Reviews of Modern Physics.
[79] A. Morpurgo,et al. Contact resistance in graphene-based devices , 2009, 0901.0485.
[80] Andre K. Geim,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[81] Dong Seup Lee,et al. Delay Analysis of Graphene Field-Effect Transistors , 2011, IEEE Electron Device Letters.
[82] D. Nezich,et al. Graphene Frequency Multipliers , 2009, IEEE Electron Device Letters.
[83] K. Shepard,et al. Graphene field-effect transistors based on boron nitride gate dielectrics , 2010, 2010 International Electron Devices Meeting.
[84] Yuyan Shao,et al. Nitrogen-doped graphene and its application in electrochemical biosensing. , 2010, ACS nano.
[85] Yan Li,et al. Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler. , 2010, Nano letters.
[86] C. Dimitrakopoulos,et al. 100 GHz Transistors from Wafer Scale Epitaxial Graphene , 2010, 1002.3845.
[87] J. E. Crombeen,et al. LEED and Auger electron observations of the SiC(0001) surface , 1975 .
[88] Qing Hua Wang,et al. Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers. , 2011, ACS nano.
[89] Kang L. Wang,et al. High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.
[90] A. Obraztsov,et al. Chemical vapor deposition of thin graphite films of nanometer thickness , 2007 .
[91] Sandip Niyogi,et al. Solution properties of graphite and graphene. , 2006, Journal of the American Chemical Society.
[92] G. Fudenberg,et al. Ultrahigh electron mobility in suspended graphene , 2008, 0802.2389.
[93] Harry Julius Emeléus,et al. Advances in Inorganic Chemistry and Radiochemistry , 1982 .
[94] C. Berger,et al. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide , 2011, Proceedings of the National Academy of Sciences.
[95] Luigi Colombo,et al. Contact resistance in few and multilayer graphene devices , 2010 .
[96] C. Dimitrakopoulos,et al. Wafer-Scale Graphene Integrated Circuit , 2011, Science.
[97] Kwang S. Kim,et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. , 2010, Nature nanotechnology.
[98] V. Bulović,et al. Doped graphene electrodes for organic solar cells , 2010, Nanotechnology.
[99] Charles R. Eddy,et al. Hall effect mobility of epitaxial graphene grown on silicon carbide , 2009, 0907.5026.
[100] A. Reina,et al. All graphene electromechanical switch fabricated by chemical vapor deposition , 2009 .
[101] P. Kim,et al. Performance of monolayer graphene nanomechanical resonators with electrical readout. , 2009, Nature nanotechnology.
[102] J. Moon,et al. Epitaxial Graphenes on Silicon Carbide , 2010, 1002.0873.
[103] W. S. Hummers,et al. Preparation of Graphitic Oxide , 1958 .
[104] S. Kim,et al. Noncovalent functionalization of graphene with end-functional polymers , 2010 .
[105] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[106] P. Ajayan,et al. Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.
[107] P. Campbell,et al. Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates , 2009, ACS nano.
[108] Aachen,et al. A Graphene Field-Effect Device , 2007, IEEE Electron Device Letters.
[109] K. Müllen,et al. Transparent, conductive graphene electrodes for dye-sensitized solar cells. , 2008, Nano letters.
[110] Guo Qin Xu,et al. Decoration of activated carbon nanotubes with copper and nickel , 2000 .
[111] Chongwu Zhou,et al. Anisotropic hydrogen etching of chemical vapor deposited graphene. , 2012, ACS nano.
[112] A. Toriumi,et al. Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[113] Ping Chen,et al. Growth of carbon nanotubes by catalytic decomposition of CH4 or CO on a NiMgO catalyst , 1997 .
[114] Mehmet Topsakal,et al. First-principles study of two- and one-dimensional honeycomb structures of boron nitride , 2008, 0812.4454.
[115] K. Shepard,et al. RF performance of top-gated, zero-bandgap graphene field-effect transistors , 2008, 2008 IEEE International Electron Devices Meeting.
[116] Han Wang,et al. Graphene-Based Ambipolar RF Mixers , 2010, IEEE Electron Device Letters.
[117] Branimir Radisavljevic,et al. Integrated circuits and logic operations based on single-layer MoS2. , 2011, ACS nano.
[118] Bei Wang,et al. Synthesis and characterisation of hydrophilic and organophilic graphene nanosheets , 2009 .
[119] Takashi Taniguchi,et al. Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature , 2004 .
[120] K. Nagashio,et al. Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors , 2011 .
[121] K. Jenkins,et al. Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.
[122] J. Moon,et al. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers , 2010, IEEE Electron Device Letters.
[123] Jae-Young Choi,et al. Layer-by-layer doping of few-layer graphene film. , 2010, ACS nano.
[124] Roberto Car,et al. Functionalized single graphene sheets derived from splitting graphite oxide. , 2006, The journal of physical chemistry. B.
[125] J. Moon,et al. Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates , 2009, IEEE Electron Device Letters.
[126] Philip Kim,et al. Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements. , 2011, Nano letters.
[127] S. Morrison,et al. Single-layer MoS2 , 1986 .
[128] Huili Grace Xing,et al. Graphene nanoribbon FETs for digital electronics: experiment and modeling , 2013, Int. J. Circuit Theory Appl..
[129] L. Mattheiss. Band Structures of Transition-Metal-Dichalcogenide Layer Compounds. , 1973 .
[130] Pablo Jarillo-Herrero,et al. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. , 2011, Nature materials.
[131] Takashi Taniguchi,et al. Deep Ultraviolet Light‐Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure. , 2007 .
[132] Yan Wang,et al. A Graphene Hybrid Material Covalently Functionalized with Porphyrin: Synthesis and Optical Limiting Property , 2009 .
[133] Rui He,et al. Visualizing Individual Nitrogen Dopants in Monolayer Graphene , 2011, Science.
[134] Hirokazu Fukidome,et al. Epitaxial graphene top-gate FETs on silicon substrates , 2009, 2009 International Semiconductor Device Research Symposium.
[135] Kiyoyuki Terakura,et al. Selective nitrogen doping in graphene: Enhanced catalytic activity for the oxygen reduction reaction , 2011 .
[136] J. Kong,et al. Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance , 2011, IEEE Electron Device Letters.
[137] I. Alstrup,et al. A new model explaining carbon filament growth on nickel, iron, and NiCu alloy catalysts , 1988 .
[138] A. Toriumi,et al. Contact resistivity and current flow path at metal/graphene contact , 2010 .
[139] Noureddine Abidi,et al. Wettability and surface free energy of graphene films. , 2009, Langmuir : the ACS journal of surfaces and colloids.
[140] J. Tour,et al. Layer-by-Layer Removal of Graphene for Device Patterning , 2011, Science.
[141] J. Kong,et al. Integrated circuits based on bilayer MoS₂ transistors. , 2012, Nano letters.
[142] D. R. Strachan,et al. Crystallographic etching of few-layer graphene. , 2008, Nano letters.
[143] Chun Li,et al. Non-covalent functionalization of graphene sheets by sulfonated polyaniline. , 2009, Chemical communications.
[144] Michael Labella,et al. Epitaxial graphene transistors: enhancing performance via hydrogen intercalation. , 2011, Nano letters.
[145] Takashi Taniguchi,et al. Synthesis of Cubic and Hexagonal Boron Nitrides by Using Ni Solvent under High Pressure , 2007 .
[146] Xiaojun Weng,et al. Nucleation of epitaxial graphene on SiC(0001). , 2010, ACS nano.
[147] P. Kim,et al. Temperature-dependent transport in suspended graphene. , 2008, Physical review letters.
[148] H. B. Weber,et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. , 2009, Nature materials.
[149] K. Mohanram,et al. Triple-mode single-transistor graphene amplifier and its applications. , 2010, ACS nano.
[150] David L. Trimm,et al. The Formation and Removal of Coke from Nickel Catalyst , 1977 .