论文信息 - Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone - 字舞流文

Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone

Kim Dean | Muthiah Thiyagarajan | Kenneth E. Consalves

[1] Shinji Okazaki,et al. Nanometer-Scale Imaging Characteristics of Novolak Resin-Based Chemical Amplification Negative Resist Systems and Molecular-Weight Distribution Effects of the Resin Matrix , 1994 .

[2] Shinji Okazaki,et al. Acid‐diffusion effect on nanofabrication in chemical amplification resist , 1992 .

[3] F. Cerrina,et al. Modeling of shot noise in x-ray photoresist exposure , 1991 .

[4] Kenji Yamazaki,et al. Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films , 1997 .

[5] F. Cerrina,et al. Extreme ultraviolet and x-ray resist: Comparison study , 1999 .

[6] H. Sakaki,et al. Interface roughness scattering and electron mobility in quantum wires , 1992 .

[7] Shazia Yasin,et al. Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist , 2001 .

[8] Jonathan L. Cobb,et al. Current Status of EUV Photoresists , 2003 .