W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

We have developed 0.1-/spl mu/m gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 /spl mu/m gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated f/sub max/ of 600 GHz is the highest reported to date for any transistor, and smaller, 30-/spl mu/m devices fabricated on the same wafer exhibit excellent noise figure (1.4 dB at 94 GHz), demonstrating the applicability of this technology to multifunction MMICs. >

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