论文信息 - A Physical Model for the Hysteresis in MoS2 Transistors - 字舞流文

A Physical Model for the Hysteresis in MoS2 Transistors

T. Grasser | B. Stampfer | M. Waltl | G. Rzepa | F. Schanovsky | T. Mueller | M. Furchi | Y. Illarionov | T. Knobloch