论文信息 - A DC method for measuring all the gate capacitors in MOS devices with atto-farad resolution

A DC method for measuring all the gate capacitors in MOS devices with atto-farad resolution

In this paper we present a new methodology for measuring all the intrinsic gate capacitors (i.e., gate-source, gate-drain, and gate-bulk) in a MOS device using a DC measurement scheme. The structure consists of two matched MOSFET's, one of which has a reference capacitor attached to its gate. The test structure was fabricated and the results show a resolution in the atto-farads range. The test structures use charge coupling to measure the gate capacitors.

L. MacEachern | Tajinder Manku

[1] R. Dutton,et al. A scaleable technique for the measurement of intrinsic MOS capacitance with atto-Farad resolution , 1985, IEEE Transactions on Electron Devices.

[2] Asad A. Abidi,et al. Low-power radio-frequency ICs for portable communications , 1995, Proc. IEEE.

[3] H. P. Tuinhout,et al. The floating gate measurement technique for characterization of capacitor matching , 1996 .

[4] T. Manku,et al. Q-enhanced 1.9 GHz tuned CMOS RF amplifier , 1996 .

[5] M. Wada,et al. Limiting factors for programming EPROM of reduced dimensions , 1980, 1980 International Electron Devices Meeting.

[7] T. Manku,et al. Thin film magnetostrictive sensor with on-chip readout and attoFarad capacitance resolution , 1996, International Electron Devices Meeting. Technical Digest.

[8] H. Schinagel,et al. Test structures and measurement techniques for the characterization of the dynamic behaviour of CMOS transistors on wafer in the GHz range , 1992, ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.