Quantum Phenomena in Semiconductor Nanostructures

[1]  Umberto Ravaioli,et al.  Effects of nonparabolic bands in quantum wires , 2005 .

[2]  Jyun-Hwei Tsai,et al.  Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using Bohm-based quantum correction , 2003 .

[3]  Hong Jiang,et al.  Absorbing Boundary Conditions for the Schrödinger Equation , 1999, SIAM J. Sci. Comput..

[4]  R. A. Logan,et al.  Toward quantum well wires: Fabrication and optical properties , 1982 .

[5]  W. Frensley,et al.  Wigner-function model of a resonant-tunneling semiconductor device. , 1987, Physical review. B, Condensed matter.

[6]  K. Jensen,et al.  Numerical simulation of transient response and resonant-tunneling characteristics of double-barrier semiconductor structures as a function of experimental parameters , 1989 .

[7]  A. Godoy,et al.  Quantum-mechanical effects in multiple-gate MOSFETs , 2007 .

[8]  L. Shifren,et al.  A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode , 2003 .

[9]  David J. Frank,et al.  Monte Carlo analysis of semiconductor devices: the DAMOCLES program , 1990 .

[10]  Umberto Ravaioli,et al.  3-D Monte Carlo simulations of FinFETs , 2003, IEEE International Electron Devices Meeting 2003.

[11]  D. Awschalom,et al.  Semiconductor spintronics and quantum computation , 2002 .

[12]  C. Sah Fundamentals of Solid State Electronics , 1991 .

[13]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[14]  William R. Frensley,et al.  Boundary conditions for open quantum systems driven far from equilibrium , 1990 .

[15]  E. Wigner On the quantum correction for thermodynamic equilibrium , 1932 .

[16]  Roberto Paiella,et al.  Intersubband Transitions In Quantum Structures , 2006 .

[17]  Transient quantum transport simulation based on the statistical density matrix , 1991 .

[18]  A. T. Galick,et al.  ITERATION SCHEME FOR THE SOLUTION OF THE TWO-DIMENSIONAL SCHRODINGER-POISSON EQUATIONS IN QUANTUM STRUCTURES , 1997 .

[19]  S. Laux,et al.  Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. , 1988, Physical review. B, Condensed matter.

[20]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[21]  Kong,et al.  Nanotube molecular wires as chemical sensors , 2000, Science.

[22]  Robert W. Dutton,et al.  Technology CAD - computer simulation of IC processes and devices , 1993, The Kluwer international series in engineering and computer science.

[23]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[24]  Basic Semiconductor Physics , 2001 .

[25]  M. Lundstrom,et al.  Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs , 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

[26]  D. Ferry,et al.  Transport in nanostructures , 1999 .

[27]  B. Hille Ionic channels of excitable membranes , 2001 .

[28]  U. Ravaioli,et al.  MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gas , 1986, IEEE Transactions on Electron Devices.

[29]  D. Ferry The onset of quantization in ultra-submicron semiconductor devices , 2000 .

[30]  D. Vasileska,et al.  Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET , 2002 .

[31]  W. Pötz,et al.  Open boundary conditions for a time‐dependent analysis of the resonant tunneling structure , 1996 .

[32]  L. Register,et al.  Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time‐dependent Schrödinger equation , 1991 .

[33]  Todd A. Brun,et al.  Quantum Computing , 2011, Computer Science, The Hardware, Software and Heart of It.

[34]  B. R. Nag,et al.  Physics of Quantum Well Devices , 2001 .

[35]  Umberto Ravaioli,et al.  Lateral scalability limits of silicon conduction channels , 1999 .

[36]  P. Dollfus,et al.  Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation , 2007 .

[37]  Umberto Ravaioli,et al.  Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures , 2002 .

[38]  S. Wind,et al.  Carbon nanotube electronics , 2003, Digest. International Electron Devices Meeting,.

[39]  Karl Hess,et al.  Theory for a quantum modulated transistor , 1989 .

[40]  K. Taniguchi,et al.  Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method , 1996 .

[41]  G.E. Moore,et al.  Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.

[42]  Gheorghe Paun,et al.  DNA Computing: New Computing Paradigms , 1998 .

[43]  S. Datta Electronic transport in mesoscopic systems , 1995 .

[44]  Particle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures , 2001 .

[45]  A. Duncan,et al.  Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors , 1998 .

[46]  Shibata Absorbing boundary conditions for the finite-difference time-domain calculation of the one-dimensional Schrödinger equation. , 1991, Physical review. B, Condensed matter.

[47]  George I. Haddad,et al.  Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios , 1988 .

[48]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[49]  R. Brunetti,et al.  The Wigner function for electron transport in mesoscopic systems , 1999 .

[50]  B. Cornell,et al.  A biosensor that uses ion-channel switches , 1997, Nature.

[51]  Ekenberg Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels. , 1989, Physical review. B, Condensed matter.

[52]  Karl Hess,et al.  Monte Carlo Device Simulation: Full Band and Beyond , 1991 .

[53]  A. E. Wetsel,et al.  Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure. , 1988, Physical review letters.

[54]  Fischetti,et al.  Monte Carlo study of electron transport in silicon inversion layers. , 1993, Physical review. B, Condensed matter.

[55]  Umberto Ravaioli,et al.  A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation , 2003 .

[56]  H. M. Antia Rational Function Approximations for Fermi-Dirac Integrals , 1993 .

[57]  M. Lundstrom Fundamentals of carrier transport , 1990 .

[58]  W. Fawcett,et al.  Monte Carlo determination of electron transport properties in gallium arsenide , 1970 .

[59]  T. Tang,et al.  The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation , 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

[60]  Cohen,et al.  Reformulated Hamiltonian for nonparabolic bands in semiconductor quantum wells. , 1988, Physical review. B, Condensed matter.

[61]  G. Pei,et al.  FinFET design considerations based on 3-D simulation and analytical modeling , 2002 .

[62]  G. Haddad,et al.  Improved boundary conditions for the time-dependent Schrödinger equation , 1990 .

[63]  Judah L. Schwartz,et al.  Computer-Generated Motion Pictures of One-Dimensional Quantum-Mechanical Transmission and Reflection Phenomena , 1967 .

[64]  P. Lugli,et al.  The Monte Carlo Method for Semiconductor Device Simulation , 1990 .

[65]  R W Hockney,et al.  Computer Simulation Using Particles , 1966 .

[66]  J. P. Kreskovsky,et al.  Electron diffraction through an aperture in a potential wall , 1989 .

[67]  J. Kavalieros,et al.  High performance fully-depleted tri-gate CMOS transistors , 2003, IEEE Electron Device Letters.

[68]  A. T. Galick,et al.  Efficient numerical simulation of electron states in quantum wires , 1990 .

[69]  R. Dingle,et al.  Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .

[70]  Macucci,et al.  Quasi-three-dimensional Green's-function simulation of coupled electron waveguides. , 1995, Physical review. B, Condensed matter.

[71]  Alan J. Heeger,et al.  Light emission from semiconducting polymers: Light-emitting diodes, light-emitting electrochemical cells, lasers and white light for the future , 1998 .

[72]  Büttiker,et al.  Four-terminal phase-coherent conductance. , 1986, Physical review letters.

[73]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[74]  R. Feynman,et al.  Effective classical partition functions. , 1986, Physical review. A, General physics.