A fully integrated 0.18 µm SiGe BiCMOS low power 60 GHz receiver & transmitter for high data rate wireless communications

In this paper, a 60 GHz low power RX and TX front ends are presented. The RX has more than 19 dB of gain between 58.2 and 67.8 GHz, an average NF of 8.7 across the frequency band of interest, and a P1dB of •24.4 dBm. The high performance RX chip only consumes 32.6 mW of power, including the buffers used to drive measurement equipment. The TX employs the sliding-IF scheme with first IF at one fifth of RF frequency. Results show a saturated power output of 12.7 dBm and a P1dB point at 11 dBm. It provides a bandwidth spanning from 48 GHz to 66 GHz.

[1]  Hai-Young Lee,et al.  A fully integrated 2.4-GHz CMOS diversity receiver with a novel antenna selection , 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

[2]  Yang Hao,et al.  A 60GHz LNA with 4.7dB NF and 18dB gain using interstage impedance matching technique in 90nm CMOS , 2011, 2011 IEEE International Conference on Microwave Technology & Computational Electromagnetics.

[3]  P. Cochat,et al.  Et al , 2008, Archives de pediatrie : organe officiel de la Societe francaise de pediatrie.

[4]  Davide Guermandi,et al.  A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS , 2011, IEEE Journal of Solid-State Circuits.

[5]  Yaoming Sun,et al.  An integrated differential 60 GHz sliding-IF receiver in SiGe BiCMOS , 2011, 2011 3rd International Conference on Computer Research and Development.