论文信息 - Influence of selector-introduced compliance current on HfOx RRAM switching operation

Influence of selector-introduced compliance current on HfOx RRAM switching operation

The influences of compliance current (CC) introduced by transistor during the forming, set and reset operations on hafnium oxide based RRAM devices are investigated respectively. Experimental results show that CC during forming operation is more critical to RRAM performances than that in set/reset operations, indicating that the suppression of current overshoot issue is more important during forming process. The impacts of CC on oxygen ions immigration during resistive switching can be responsible for the different influences on devices in set/reset and forming operation.

[1] Kuk-Hwan Kim,et al. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation , 2014, IEEE Transactions on Electron Devices.

[2] Bing Chen,et al. RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study , 2013, IEEE Transactions on Electron Devices.

[3] Kinam Kim,et al. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure , 2013, Nature Communications.

[4] An Chen. Comprehensive methodology for the design and assessment of crossbar memory array with nonlinear and asymmetric selector devices , 2013, 2013 IEEE International Electron Devices Meeting.

[5] P. Zhou,et al. In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching , 2010, IEEE Electron Device Letters.

[6] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[7] S. Koveshnikov,et al. Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time , 2012, 2012 International Electron Devices Meeting.

[8] L. Goux,et al. Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current , 2013, 2013 IEEE International Electron Devices Meeting.