Microstructural and optical properties of as-deposited LPCVD silicon films
暂无分享，去创建一个
[1] P. Petrik,et al. Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition , 2000 .
[2] T. Lohner,et al. Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy , 1998 .
[3] D. Dascalu,et al. Spectro-ellipsometric investigations of polycrystalline silicon surface roughness , 1996 .
[4] S. D. Brotherton. Polycrystalline silicon thin film transistors , 1995 .
[5] J. Stoemenos,et al. Effect of pressure on the growth of crystallites of low‐pressure chemical‐vapor‐deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin‐film transistors , 1993 .
[6] C. Cobianu,et al. On the electrical conduction in the interpolysilicon dielectric layers , 1993, IEEE Electron Device Letters.
[7] Miltiadis K. Hatalis,et al. Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures , 1992 .
[8] B. Loisel,et al. The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films , 1987 .
[9] E. F. Steigmeier,et al. Growth and Physical Properties of LPCVD Polycrystalline Silicon Films , 1984 .
[10] B. G. Brooks,et al. Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon , 1981 .
[11] M. DiDomenico,et al. Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials , 1971 .