Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

[1]  Alan Mills,et al.  Eurotour' 96 — The wide bandgap special Rigi-Strasbourg-Cardiff , 1996 .

[2]  Chih‐Hao Lee,et al.  X‐ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers , 1996 .

[3]  W. Chu,et al.  Pd-cell purified hydrogen for highest purity AlGaAs grown by MOVPE , 1996 .

[4]  J. Zolper,et al.  Ion‐implanted GaN junction field effect transistor , 1996 .

[5]  S. Hersee,et al.  The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire , 1995 .

[6]  M. Khan,et al.  Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance , 1995 .

[7]  R. Street,et al.  Photoemission capacitance transient spectroscopy of n‐type GaN , 1995 .

[8]  Michael S. Shur,et al.  Microwave performance of a 0.25 m gate AlGaN/GaN heterostructure field effect transistor , 1994 .

[9]  Isamu Akasaki,et al.  Deep level defects in n‐type GaN , 1994 .

[10]  M. Khan,et al.  High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor , 1994 .

[11]  H. Amano,et al.  Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers , 1994 .

[12]  M. Unlu,et al.  Intensity dependence of photoluminescence in GaN thin films , 1994 .

[13]  N. Newman,et al.  p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg , 1994 .

[14]  Khan,et al.  Electron-spin-resonance studies of donors in wurtzite GaN. , 1993, Physical review. B, Condensed matter.

[15]  T. Sasaki.  Surface morphology of MOVPE-grown GaN on (0001) sapphire , 1993 .

[16]  Shuji Nakamura,et al.  GaN Growth Using GaN Buffer Layer , 1991 .

[17]  J. Xie,et al.  Photoluminescence of GaN epitaxial layers , 1982 .

[18]  Toshio Ogino,et al.  Mechanism of Yellow Luminescence in GaN , 1980 .

[19]  Y. Yeo,et al.  OPTICAL ACTIVATION OF ION IMPLANTED AND ANNEALED GAN , 1997 .

[20]  K. Nishida,et al.  MOVPE of GaN using a specially designed two-flow horizontal reactor , 1997 .

[21]  O. Briot,et al.  Optimization of the MOVPE growth of GaN on sapphire , 1997 .

[22]  Takashi Mukai,et al.  P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes , 1993 .

[23]  J. Pankove.  Properties of Gallium Nitride , 1987 .

[24]  J. Pankove.  Optical properties of GaN , 1975 .