Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers (GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases.

[1]  W. X. Wang,et al.  Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate , 2012 .

[2]  D. Jena,et al.  Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering , 2010, 1009.2156.

[3]  H. Sakaki,et al.  Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas , 2010 .

[4]  S. Tarasenko.  Electron scattering in quantum wells subjected to an in-plane magnetic field , 2007, 0711.2407.

[5]  V. V. Bel'kov,et al.  Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells , 2007, 0708.0088.

[6]  G. S. Vieira,et al.  Resonant tunneling between thermal excited states tuned by a magnetic field , 2007 .

[7]  D. Ritchie,et al.  Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas , 2007 .

[8]  C. S. Sergio,et al.  The quantum mobility of a two-dimensional electron gas in selectively doped GaAs∕InGaAs quantum wells with embedded quantum dots , 2005 .

[9]  L. Pfeiffer,et al.  Effect of an in-plane magnetic field on the photoluminescence spectrum of modulation-doped quantum wells and heterojunctions , 2004, cond-mat/0410116.

[10]  F. Vasko,et al.  Spin-polarized tunneling current between independently contacted quantum wells , 2004 .

[11]  E. Mendez,et al.  Tunneling characteristics of an electron-hole trilayer in a parallel magnetic field , 2002, cond-mat/0207070.

[12]  K. Klitzing,et al.  Magnetic-field-induced dispersion anisotropy of intersubband excitations in an asymmetrical quasi-two-dimensional electron system , 2000 .

[13]  Y. Tokura.  Two-dimensional electron transport with anisotropic scattering potentials , 1998 .

[14]  G. Medeiros-Ribeiro,et al.  InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas , 1998 .

[15]  O. Kibis.  Possible new quantum macroscopic effect in low-dimensional structures: The appearance of an electromotive force in a standing acoustic wave , 1998 .

[16]  K. Kuhn,et al.  Dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells , 1991 .

[17]  West,et al.  Probing a two-dimensional Fermi surface by tunneling. , 1991, Physical review. B, Condensed matter.

[18]  Weimann,et al.  Tunneling spectroscopy in barrier-separated two-dimensional electron-gas systems. , 1991, Physical review. B, Condensed matter.

[19]  H. Ohno,et al.  Tangential magnetoresistance of two‐dimensional electron gas at a selectively doped n‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy , 1982 .

[20]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .