Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems

Spontaneous polarizations of GaN nanostructures and quantum dots are calculated for different surface terminations. In addition, dimensionally-confined phonons in GaN-based nanostructures are discussed. GaN-based nanostructures have applications in a variety of systems and concepts including: non-charge-transfer-based devices and single-photon detectors based on GaN-based double-barrier quantum-well injectors, conductive-polymer collectors, and colloidal quantum dot recombination regions. In this paper, application of photodetectors is considered along with the related application of using colloidal quantum-dot-based ensembles for solar cell applications.

[1]  Eoin P. O'Reilly,et al.  Theory of the electronic structure of GaN/AlN hexagonal quantum dots , 2000 .

[2]  S. M. Komirenko,et al.  Dispersion of polar optical phonons in wurtzite quantum wells , 1999 .

[3]  Near IR and UV Enhanced Photoresponse of C60‐Doped Semiconducting Polymer Photodiode , 1999 .

[4]  Mitra Dutta,et al.  Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties , 2003 .

[5]  Arthur J. Nozik,et al.  Synthesis, structure, and optical properties of colloidal GaN quantum dots , 1999 .

[6]  A J Shields,et al.  Efficient single photon detection by quantum dot resonant tunneling diodes. , 2005, Physical review letters.

[7]  Polymer‐polymer rectifying heterojunction based on poly(3,4‐dicyanothiophene) and MEH‐PPV , 1998 .

[8]  Hongsuk Suh,et al.  Synthesis and characterization of highly luminescent asymmetric poly(p-phenylene vinylene) derivatives for light-emitting diodes , 2002 .

[9]  Mitra Dutta,et al.  BIOLOGICALLY-INSPIRED CHEMICALLY-DIRECTED SELF-ASSEMBLY OF SEMICONDUCTOR QUANTUM-DOT-BASED SYSTEMS: PHONON-HOLE SCATTERING IN DNA BOUND TO DNA-QUANTUM-DOT COMPLEXES , 2006 .

[10]  Peng,et al.  Charge separation and transport in conjugated-polymer/semiconductor-nanocrystal composites studied by photoluminescence quenching and photoconductivity. , 1996, Physical review. B, Condensed matter.

[11]  David Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .

[12]  Vladimir Mitin,et al.  Quantum Heterostructures: Microelectronics and Optoelectronics , 1999 .

[13]  M. Stroscio,et al.  Spontaneous polarization effects in nanoscale wurtzite structures , 2007 .

[14]  Mitra Dutta,et al.  Integrated Biological-Semiconductor Devices , 2005, Proceedings of the IEEE.

[15]  Jen-Inn Chyi,et al.  AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy , 2002 .

[16]  G. Konstantatos,et al.  Solution-processed PbS quantum dot infrared photodetectors and photovoltaics , 2005, Nature materials.

[17]  Yang Li,et al.  Binding of semiconductor quantum dots to cellular integrins , 2004, IEEE Transactions on Nanotechnology.

[18]  Mitra Dutta,et al.  GaN quantum dots: nanophotonics and nanophononics , 2006, SPIE OPTO.

[19]  I. Akasaki,et al.  Infrared lattice vibration of vapour-grown AlN , 1967 .

[20]  Suski,et al.  Raman-scattering studies of aluminum nitride at high pressure. , 1993, Physical review. B, Condensed matter.

[21]  Jerzy Kanicki,et al.  Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors , 2003, SPIE Optics + Photonics.

[22]  Shuji Nakamura,et al.  Polarized Raman spectra in GaN , 1995 .

[23]  Yang Li,et al.  Optical and Electrical Properties of Colloidal Quantum Dots in Electrolytic Environments: Using Biomolecular Links in Chemically-Directed Assembly of Quantum Dot Networks , 2005 .