High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N∕Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5nm, a photoluminescence internal efficiency of 67% for peak emission at 382nm at room temperature.

[1]  Vincenzo Fiorentini,et al.  Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences , 1999 .

[2]  Fabrice Semond,et al.  Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates , 2003 .

[3]  Phil Dawson,et al.  Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells , 2005 .

[4]  Robert W. Martin,et al.  Origin of Luminescence from InGaN Diodes , 1999 .

[5]  C. Humphreys,et al.  High quantum efficiency InGaN/GaN structures emitting at 540 nm , 2006 .

[6]  Kazumi Wada,et al.  Exciton localization in InGaN quantum well devices , 1998 .

[7]  Hadis Morkoç,et al.  Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .

[8]  T. Mukai,et al.  Recent progress in group-III nitride light-emitting diodes , 2002 .

[9]  C. Humphreys,et al.  Optical and microstructural studies of InGaN∕GaN single-quantum-well structures , 2005 .

[10]  S. Nakamura,et al.  Biaxial strain dependence of exciton resonance energies in wurtzite GaN , 1997 .

[11]  P. Perry,et al.  The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process , 1978 .

[12]  Shuji Nakamura,et al.  The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes , 1998 .

[13]  Irving H. Malitson,et al.  Refraction and Dispersion of Synthetic Sapphire , 1962 .

[14]  Tae Whan Kim,et al.  White-light generation through ultraviolet-emitting diode and white-emitting phosphor , 2004 .

[15]  Oliver Ambacher,et al.  Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures , 2002 .

[16]  Bo Monemar,et al.  Fundamental energy gap of GaN from photoluminescence excitation spectra , 1974 .

[17]  M. J. Godfrey,et al.  Temperature dependent optical properties of InGaN/GaN quantum well structures , 2001 .

[18]  P. Hinze,et al.  Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes , 2006 .

[19]  Suzuki,et al.  First-principles calculations of effective-mass parameters of AlN and GaN. , 1995, Physical review. B, Condensed matter.

[20]  Marc Ilegems,et al.  Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions , 2006 .

[21]  C. Walle,et al.  Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment , 2004 .